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1 cghv96050f1 50 w, 7.9 - 9.6 ghz, 50-ohm, input/output matched gan hemt crees cghv96050f1 is a gallium nitride (gan) high electron mobility transistor (hemt) on silicon carbide (sic) substrates. this gan internally matched (im) fet offers excellent power added effciency in comparison to other technologies. gan has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. gan hemts also offer greater power density and wider bandwidths compared to gaas transistors. this im fet is available in a metal/ceramic fanged package for optimal electrical and thermal performance. re v 2.0 C ma y 2015 typical performance over 7.9-8.4 ghz (t c = 25?c) parameter 7.9 ghz 8.0 ghz 8.1 ghz 8.2 ghz 8.3 ghz 8.4 ghz units linear gain 17.0 16.7 16.4 15.9 15.2 14.6 db output power 22.4 28.2 28.2 31.6 31.6 31.6 w power gain 15.6 15.0 15.1 14.5 14.0 13.2 db power added effciency 30 37 37 39 38 37 % note: measured at -30 dbc, 1.6 mhz from carrier, in the cghv96050f1-amp (838176) under oqpsk modulation, 1.6 msps, pn23, alpha filter = 0.2 features ? 7.9 - 8.4 ghz operation ? 80 w p out typical ? >13 db power gain ? 33 % typical linear pae ? 50 ohm internally matched ? <0.1 db power droop applications ? satellite communication ? terrestrial broadband pn: cghv96050f1 package type: 440210 subject to change without notice. www.cree.com/rf
2 absolute maximum ratings (not simultaneous) parameter symbol rating units conditions drain-source voltage v dss 100 volts 25?c gate-source voltage v gs -10, +2 volts 25?c power dissipation p diss 57.6 / 86.4 watts (cw / pulse) storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum drain current i dmax 6 amps maximum forward gate current i gmax 14.4 ma 25?c soldering temperature 1 t s 245 ?c screw torque 40 in-oz thermal resistance, junction to case r jc 1.26 ?c/w pulse width = 100 s, duty cycle = 10%, p diss = 86.4 w thermal resistance, junction to case r jc 2.16 ?c/w cw, 85?c, p diss = 57.6 w case operating temperature 3 t c -40, +150 ?c note: 1 current limit for long term reliable operation. 2 refer to the application note on soldering at http://www.cree.com/rf/document-library 3 see also, the power dissipation de-rating curve on page 10. electrical characteristics (frequency = 7.9 - 8.4 ghz unless otherwise stated; t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v v ds = 10 v, i d = 14.4 ma gate quiscent voltage v q C -3.0 C v v ds = 40 v, i d = 500 ma saturated drain current 2 i ds 11.5 13.0 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v bd 100 C C v v gs = -8 v, i d = 14.4 ma rf characteristics 3 small signal gain s21 13.25 16 C db v dd = 40 v, i dq = 500 ma, p in = -20 dbm input return loss s11 C C4.9 -3.0 db v dd = 40 v, i dq = 500 ma, p in = -20 dbm output return loss s22 C C10.7 -5.5 db v dd = 40 v, i dq = 500 ma, p in = -20 dbm power gain 3, 4 p g1 10.75 15.6 C db v dd = 40 v, i dq = 500 ma, p out = 44 dbm, freq. = 7.9 ghz power gain 3, 4 p g2 10.75 13.5 C db v dd = 40 v, i dq = 500 ma, p out = 44 dbm, freq. = 8.4 ghz power added effciency 3, 4 pae 1 18 25 C % v dd = 40 v, i dq = 500 ma, p out = 44 dbm, freq. = 7.9 ghz power added effciency 3, 4 pae 2 18 27 C % v dd = 40 v, i dq = 500 ma, p out = 44 dbm, freq. = 8.4 ghz oqpsk linearity 3, 4 aclr 1 C C -26 dbc v dd = 40 v, i dq = 500 ma, p out = 44 dbm, freq. = 7.9 ghz oqpsk linearity 3, 4 aclr 2 C C -26 dbc v dd = 40 v, i dq = 500 ma, p out = 44 dbm, freq. = 8.4 ghz output mismatch stress vswr C 5:1 C y no damage at all phase angles, v dd = 40 v, i dq = 500 ma notes: 1 measured on-wafer prior to packaging. 2 scaled from pcm data. 3 measured at -30 dbc, 1.6 mhz from carrier, in the cghv96050f1-amp (838176) under oqpsk modulation, 1.6 msps, pn23, alpha: filter = 0.2. 4 fixture loss de-embedded using the following offsets: at 7.9 ghz, input and output = 0.45 db. at 8.4 ghz, input = 0.50 db and output = 0.55 db. cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
3 cghv96050f1 typical performance figure 1. - small signal gain and return loss vs frequency of cghv96050f1 measured in cghv96050f1-amp v ds = 40 v, i dq = 500ma figure 2. - intermodulation distortion performance vs. tone spacing v dd = 40 v, frequency = 8.2 ghz, output power = 44 dbm / 20 w 0 5 10 15 20 sm a l l si g n a l g a i n , i n p u t a n d o u tp u t r e tu r n l o s s (d b ) typical small signal gain and return loss vs frequency of the cghv96050f1 measured in CGHV96050F1-TB vds =40 v, idq =500 ma s11 typ s21 typ s22 typ -20 -15 -10 -5 7.0 7.5 8.0 8.5 9.0 9.5 10.0 10.5 11.0 sm a l l si g n a l g a i n , i n p u t a n d o u tp u t r e tu r n l o s s (d b ) frequency (ghz) -30 -25 -20 -15 -10 -5 0 i n te r m o d u l a ti o n d i s to r ti o n (d b c ) im performance vs tone spacing pout 43.0 dbm @ 8.2 ghz im3_negative im3_positive im5_negative im5_positive im7_negative im7_positive -60 -55 -50 -45 -40 -35 0.1 1 10 100 i n te r m o d u l a ti o n d i s to r ti o n (d b c ) frequency (mhz) cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
4 cghv96050f1 typical performance figure 3. - im3 and im5 vs. output power at 7.9 ghz, 8.2 ghz, and 8.4 ghz v dd = 40 v, tone spacing = 100 khz figure 4. - two tone ims vs. output power v dd = 40 v, tone spacing = 100 khz -40 -30 -20 -10 0 i n te r m o d u l a ti o n d i s to r ti o n (d b c ) im3 & im5 vs. pout 7.9, 8.2 & 8.4 ghz 100 khz tone spacing 7.9 ghz_im3_negative 7.9 ghz_im3_positive 8.2 ghz_im3_negative 8.2 ghz_im3_positive 8.4 ghz_im3_negative 8.4 ghz_im3_positive 7.9 ghz_im5_negative 7.9 ghz_im5_positive 8.2 ghz_im5_negative 8.2 ghz_im5_positive 8.4 ghz_im5_negative 8.4 ghz_im5_positive -80 -70 -60 -50 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 i n te r m o d u l a ti o n d i s to r ti o n (d b c ) output power (dbm) - 40 -30 -20 -10 0 i n t er mo d u l ati o n d i sto r t i o n ( d b c) im3 two tone vs. pout 100 khz -70 -60 -50 - 40 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 i n t er mo d u l ati o n d i sto r t i o n ( d b c) output power (dbm) 7.9 ghz 8.0 ghz 8.1 ghz 8.2 ghz 8.3 ghz 8.4 ghz cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
5 cghv96050f1 typical performance figure 5. - two tone power added effciency vs. output power v dd = 40 v, tone spacing = 100 khz figure 6. - two tone gain vs. output power v dd = 40 v, tone spacing = 100 khz 25% 30% 35% 40% 45% 50% po w er a d d ed ef f i ci en cy ( % ) pae two tone vs. pout 100 khz 7.9 ghz 8.0 ghz 8.1 ghz 8.2 ghz 8.3 ghz 8.4 ghz 0% 5% 10% 15% 20% 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 po w er a d d ed ef f i ci en cy ( % ) output power (dbm) 9 10 11 12 13 14 15 16 17 18 19 20 gai n ( d b ) gain two tone vs. pout 100 khz 7.9 ghz 8.0 ghz 8.1 ghz 0 1 2 3 4 5 6 7 8 18 20 22 24 26 28 30 32 34 36 38 40 42 44 46 gai n ( d b ) output power (dbm) 8.1 ghz 8.2 ghz 8.3 ghz 8.4 ghz cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
6 cghv96050f1 typical performance figure 7. - spectral mask under oqpsk modulation, 1.6 msps v dd = 40 v, output power = 44 dbm / 25 w figure 8. - linear output power, gain, and power added effciency vs frequency v dd = 40 v, i dq = 500 ma, 1.6 msps, oqpsk modulation at -30 dbc - 35 -30 -25 -20 -15 -10 -5 0 5 10 sp ect r a ( d b c) spectral mask @ 25 w 7.9 ghz 8.2 ghz 8.4 ghz -70 -65 -60 -55 -50 -45 -40 - 35 -6 -5 -4 -3 -2 -1 0 1 2 3 4 5 6 sp ect r a ( d b c) frequency (mhz) 25 30 35 40 45 50 o u tp u t po w e r (w ), g a i n (d b ) & p a e (% ) cghv96050f1 linear output power, gain and pae @ -30 dbc, 1.6 mhz from carrier vdd 40 v, idq = 500 ma, 1.6 msps opsk modulation power added efficiency (%) output power (w) power gain (db) 0 5 10 15 20 7.8 7.9 8.0 8.1 8.2 8.3 8.4 8.5 o u tp u t po w e r ( w ), g a i n (d b ) & p a e (% ) frequency (ghz) cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
7 cghv96050f1 typical performance figure 9. - oqpsk linearity vs output power v dd = 40 v, frequency = 1.6 mhz figure 10. - power gain and power added effciency vs output power v dd = 40 v, i dq = 500 ma, 1.6 msps, oqpsk modulation at -30 dbc -25 -20 -15 -10 -5 0 i n t er mo d u l ati o n d i st o r t i o n ( d b c) opsk (1.6 mhz) linearity vs. pout 7.9 ghz 8.2 ghz 8.4 ghz -50 -45 -40 -35 -30 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 i n t er mo d u l ati o n d i st o r t i o n ( d b c) output power (dbm) 20 25 30 35 40 po w er gai n ( d b ) . po w er a d d ed ef f i ci en cy ( % ) power gain vs. pout opsk 1.6 mhz power gain (7.9 ghz) power gain (8.2 ghz) power gain (8.4 ghz) pae (7.9 ghz) pae (8.2 ghz) pae (8.4 ghz) 0 5 10 15 25 26 27 28 29 30 31 32 33 34 35 36 37 38 39 40 41 42 43 44 45 46 po w er gai n ( d b ) . po w er a d d ed ef f i ci en cy ( % ) output power (dbm) cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
8 cghv96050f1-amp demonstration amplifer circuit bill of materials designator description qty r1 res, 47 ohm,+/-1%, 1/16 w, 0603, smd 1 r2, r3 res, 0 ohm +/-5%, 125 mw, 1206, smd 2 c1 cap, 1.6pf, +/- 0.1 pf, 200v, 0402, atc 600l 1 c2 cap, 1.0pf, +/- 0.1 pf, 200v, 0402, atc 600l 1 c3, c13 cap, 10 pf +/-5%, 0603, atc 2 c4, c14 cap, 470 pf +/-5%, 100 v, 0603 2 c5, c15 cap, 33,000 pf, 0805, 100 v, x7r 2 c11, c12 cap, 1.8pf, +/- 0.1 pf, 200v, 0402, atc 600l 2 c16 cap, 1 uf +/-10%, 100 v, x7p, 1210 1 c17 cap, 33 uf +/-20%, g-case 1 c18 cap, 470 uf, +/-20%, electrolytic 1 j1,j2 connector, sma, panel mount jack, flange, 4-hole, blunt post, 20mil 2 j3 connector, header, rt>plz .1cen lk 9pos 1 - pcb, test fixture, taconics rf35p, 20 mil thk, 440210 pkg 1 - 2-56 soc hd screw 1/4 ss 4 - #2 split lockwasher ss 4 q1 cghv96050f1 1 cghv96050f1-amp demonstration amplifer circuit cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
9 cghv96050f1-amp demonstration amplifer circuit schematic cghv96050f1-amp demonstration amplifer circuit outline cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
10 cghv96050f1 power dissipation de-rating curve note. shaded area exceeds maximum case operating temperature (see page 2) electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a > 250 v jedec jesd22 a114-d charge device model cdm 1 < 200 v jedec jesd22 c101-c cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
11 product dimensions cghv96050f1 (package type 440210) cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
12 part number system parameter value units upper frequency 1 9.6 ghz power output 50 w package flange - table 1. note 1 : alpha characters used in frequency code indicate a value greater than 9.9 ghz. see table 2 for value. character code code value a 0 b 1 c 2 d 3 e 4 f 5 g 6 h 7 j 8 k 9 examples: 1a = 10.0 ghz 2h = 27.0 ghz table 2. package, linear test power output (w) upper frequency (ghz) cree gan hemt high voltage cghv96050f1 cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
13 product ordering information order number description unit of measure image cghv96050f1 gan hemt each CGHV96050F1-TB test board without gan hemt each cghv96050f1-amp test board with gan hemt installed each cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.
14 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for its use or for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications, and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended, or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death, or in applications for the planning, construction, maintenance or direct operation of a nuclear facility. cree and the cree logo are registered trademarks of cree, inc. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 cghv96050f1 rev 2.0 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2013 - 2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc. other trademarks, product and company names are the property of their respective owners and do not imply specifc product and/or vendor endorsement, sponsorship or association.

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